Kaustav Banerjee is Professor of Electrical and Computer Engineering and Director of the Nanoelectronics Research Lab at UC Santa Barbara. He is internationally recognized for pioneering contributions to energy-efficient electronics, 3D integrated circuits, and the application of low-dimensional materials in micro- and nanoelectronics.
His seminal work on two-dimensional (2D) materials—including interconnects, transistors, memory, and monolithic 3D integration—has addressed key scaling challenges in mainstream semiconductor technology. He invented the graphene kinetic inductor, a breakthrough described by Forbes as a potential “trillion-dollar” innovation for overcoming fundamental limits in on-chip inductors.
In 2021, he co-founded Destination 2D Inc. to accelerate the integration of 2D materials into CMOS, building on his pioneering contributions to intercalated-graphene interconnects and their CMOS-compatible synthesis. The company and its core technology were recently featured in IEEE Spectrum for their potential to extend Moore’s Law.
Banerjee is a Fellow of IEEE, APS, AAAS, JSPS, and AIIA. His awards include the IEEE Kiyo Tomiyasu Award, the Bessel Prize from the Humboldt Foundation, and the JSAP Fellow International title from the Japan Society of Applied Physics. He is also a Clarivate Analytics Highly Cited Researcher and a recipient of UCSB’s Outstanding Graduate Mentor Award. He earned his Ph.D. in Electrical Engineering and Computer Sciences from the University of California, Berkeley.

Dr. Das received his B.Eng. degree (2007) in Electronics and Telecommunication Engineering from Jadavpur University, India, and his Ph.D. degree (2013) in Electrical and Computer Engineering from Purdue University. He was a Postdoctoral Research Scholar (2013-2015) and Assistant Research Scientist (2015-2016) at Argonne National Laboratory (ANL). Dr. Das joined the Department of Engineering Science and Mechanics (ESM) at Penn State University in January 2016.  Dr. Das received the Young Investigator Award from the United States Air Force Office of Scientific Research in 2017 and the National Science Foundation (NSF) CAREER award in 2021. Das Research Group at Penn State focuses on 2D microelectronics for monolithic 3D integration, bio-inspired sensing, neuromorphic computing, and hardware security.

Prof. Tibor Grasser is an IEEE Fellow and head of the Institute for Microelectronics at TU Wien, Austria.  He has edited various books, e.g. on the bias temperature instability, hot carrier degradation, and low-frequency noise (all with Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM (General Chair 2021), IRPS, ESSDERC (TPC Co-Chair 2015), IIRW (General Chair 2014), and SISPAD (General Chair 2007), is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011).  He served as an Associate Editor for IEEE T-ED and Microelectronics Reliability (Elsevier).

Zheng Vitto Han is a research professor at the Institute of Optoelectronics, Shanxi University, China. He also serves jointly as the deputy lab director at the Liaoning Academy of Materials (LAM) and the director of the Institute of Quantum Materials and Devices at LAM in Shenyang, China. He obtained his Ph.D. at the Néel Institute, CNRS, France, and conducted postdoctoral research at Columbia University in New York City. His research primarily focuses on the emerging physical properties of functional materials at mesoscopic scales and on further implementing these interesting properties in future applications of nano-assemblies and nanoelectronics. Over the past few years, his team has uncovered a series of novel physical phenomena and nanostructures, such as the demonstration of a finFET with a single atomic fin, the realization of robust quantum Hall phases through the interfacial charge transfer and the induced charge orderings, the development of van der Waals polarity-engineered 3D integration of 2D complementary logic. The related works have been published in journals including Nature, Nature Nanotechnology, Nature Electronics, and Nature Communications.

Andras Kis is a Full Professor of Electrical Engineering at EPFL, Lausanne. His research interests include electronic devices, TMDC exciton and valley physics, and material growth. He pioneered the use of the 2D semiconductor MoS₂ in transistors, a breakthrough that led to MoS₂ being recognized in the ITRS roadmap and gaining widespread attention with the corresponding paper having received more than 16’000 citations. Atomically thin 2D semiconductors like MoS₂ are emerging as a new material class in the semiconductor industry, with applications in scaled devices, neuromorphic circuits, and photonic devices due to their favorable electrical and optical properties.

Andras Kis was born in Zagreb, Croatia. He received his M. Sc degree in physics from the University of Zagreb, Croatia and the Ph.D. degree in physics from École Polytechnique Fédérale de Lausanne, Switzerland in 2003 in the group of Prof. László Forró. He worked as a postdoctoral researcher at the University of California, Berkeley from 2004 to 2007 in the group of Prof Alex Zettl. He was appointed as an assistant professor at the Institute of Electrical engineering, EPFL in 2008.

A highly cited researcher and an IEEE Fellow, Andras Kis is the recipient of the 2024 IEEE Lotfi A. Zadeh Award for Emerging Technologies, recognizing his pioneering contributions to 2D materials and electronic devices. He currently serves as the Editor-in-Chief of Nature Partner Journal: 2D Materials and Applications.

Dr. Lain-Jong (Lance) Li is currently a Distinguished Professor in the Department of Materials Science at the National University of Singapore. He has held esteemed positions, including Chair Professor of Future Electronics at The University of Hong Kong and Director of Corporate Research at TSMC. He is a Fellow of the Royal Society of Chemistry and serves as an Associate Editor for Nano Letters under the American Chemical Society.

Dr. Li completed his Bachelor’s and Master’s degrees in Chemistry at National Taiwan University in 1994 and 1996, respectively. Subsequently, he worked as a Senior R&D Engineer at TSMC from 1997 to 2002. He obtained his Ph.D. in Condensed Matter Physics from the University of Oxford in 2006 and commenced his academic career as an Assistant Professor at Nanyang Technological University in Singapore. He served as an Associate Research Fellow at Academia Sinica in Taiwan in 2010 and joined KAUST in Saudi Arabia in 2014, where he advanced to the position of Full Professor by 2016. Dr. Li returned to TSMC as the Director of Corporate Research in late 2017. In 2021, he was appointed as a Chair Professor at The University of Hong Kong, and in 2025, he joined the National University of Singapore. His research is focused on Chemical Vapor Deposition (CVD), tool design, device fabrication and integration, and the growth of 2D semiconductor materials, including graphene and boron nitride. He holds over 60 U.S. patents and has been recognized as a Highly Cited Researcher from 2018 to 2024, with more than 500 publications, 84,000 citations, and an H-index of 134 according to the AD Science Index.

Dr. Shigeo Maruyama, FRSC, received his Ph.D. from the University of Tokyo in 1988. He worked as a Research Associate until 1991, as a Lecturer for a year, as an Associate Professor from 1993, and as a full Professor from 2004 at the University of Tokyo. Since 2014, he has been a Distinguished Professor at the Department of Mechanical Engineering, School of Engineering at the University of Tokyo. He joined Professor Richard Smalley's group at Rice University as a visiting fellow for about 2 years from 1989. He was also assigned as a visiting professor at Ecole Centrale Paris in 2006, the cross-appointment fellow for advanced industrial science and technology (AIST) from 2015 to 2021, a guest professor at Peking University from 2016 to 2017, and a Qiushi Guest Professor at Zhejiang University from 2024.

 His research interests include nanoscale thermal engineering, molecular dynamics simulations, carbon nanotubes, graphene, 1D heterostructures, and solar cell applications. He developed the alcohol catalytic chemical vapor deposition (ACCVD) process for synthesizing single-walled carbon nanotubes (SWCNTs) in 2002. More recently, he has developed 1D van der Waals heterostructures based on SWCNTs, where SWCNTs are co-axially wrapped by hexagonal boron nitride nanotube (BNNT) and transition metal dichalcogenides (TMD) nanotubes. He served as the president of “The Fullerenes, Nanotubes, and Graphene Research Society" from 2011–2020 and is the co-chair of the steering committee of "International Conference on Science and Application of Nanotubes and Low-Dimensional Materials" (NT). Since 2023, he has been a member of the Engineering Academy of Japan.

LIAN-MAO PENG received the B.S. degree in physical electronics from Peking University, Beijing, China, in 1982 and the Ph.D. degree in physics from Arizona State University, Tempe, AZ, USA, in 1988. From May to December 1988, he visited the University of Oslo as a visiting scientist. He spent the following six years working at the University of Oxford, first as a research assistant and then Glasstone Research Fellow at the University of Oxford. He returned to China in 1995, first as a Senior Research Scientist at the Institute of Physics, Chinese Academy of Sciences, and then joined the faculty of the Peking University and became the Yangzi Professor of Nanoscale Science and Technology in 1999, the Director of the Center for Carbon based Nanoelectronics in 2015, and the Dean of the School of Electronics in 2021. He currently serves as the Vice Chairman of the China Vacuum Society, a member of the Editorial Advisory Board for Advanced Functional Materials, and an Advisory Editor for the journal Research. He has authored or coauthored more than 400 research papers, with citation of more than 35,000 and h-index of 86. In 2000, he was elected a Fellow of the Institute of Physics in the UK, and in 2019, he was elected as an academician of the Chinese Academy of Sciences.

He is mainly engaged in research on electron microscopy and carbon-based nanoelectronics. He has served as the chief scientist for four national "973 Programs," major scientific research programs, and key R&D projects, making a series of foundational and pioneering contributions. In the field of electron microscopy, he has developed a theoretical framework that can accurately handle electron diffraction and scattering of general material systems, establishing methods for determining material structures and the necessary parameter databases. In the field of carbon-based electronics, he has developed a set of new technologies for doping-free preparation of carbon-based CMOS integrated circuits, successfully producing carbon nanotube transistors with a gate length of only 5 nanometers, achieving performance surpassing silicon-based devices by more than ten times.

He was awarded the inaugural National Distinguished Youth Science Fund in 1994 and was selected as a special professor of the Ministry of Education's "Changjiang Scholars Program" in 1999. His related achievements have won the second prizes of the National Natural Science Award (2010 and 2016), selected as one of China's top ten scientific and technological advances in higher education (2000, 2017 and 2023), China's top ten basic science research news (2000 and 2023), China's top ten scientific advances (2011), a major landmark original achievement in national science and technology innovation centers (2018), China's top ten research advances in semiconductors (2020 and 2023), and China's top ten science and technology advances news (2023). He has received honors such as the Science and Technology Progress Award from the Ho Leung Ho Lee Foundation (2018) and the National Innovation Excellence Award (2017).

Uwe Schroeder has been the deputy scientific director at the Nanoelectronic Materials Laboratory (NaMLab) in Dresden since he joined the company in 2009. His research focuses on the material properties of ferroelectric hafnium oxide and its integration into future devices. He is primarily involved in process integration, device characterization, and reliability improvement. Previously, he worked at the Infineon/Qimonda DRAM Development Center in Fishkill, New York and Dresden, Germany, since 1997. There, he developed high-k dielectrics for integration into DRAM capacitors. During this time, the previously unknown ferroelectric properties of doped HfO₂-based dielectrics were discovered in 2006. Uwe Schroeder received his Ph.D. from the University of Bonn, Germany, including a research stay at UC California, Berkeley, and worked as a postdoctoral researcher at the University of Chicago.

He is (co-)author of more than 570 papers and conference contributions and more than 30 patents, including more than 235 peer-reviewed publications, 70 invited presentations on ferroelectric HfO₂ material properties and devices based thereon. He has co-edited two editions of a book on ferroelectric HfO₂, was on the editorial board of IEEE Electron Devices Letters, and is a member of several IEEE and AVS technical program committees. Dr. Schroeder is the 2019 recipient of the FMA International Award for Ferroelectric Materials and Their Applications.

Aaron Voon-Yew Thean is the GlobalFoundries Professor of Electrical and Computer Engineering at the National University of Singapore (NUS). He is currently the Deputy President (Academic Affairs) and Provost of NUS. He was he Founding Dean of NUS College of Design and Engineering (2022), and the Dean of the Faculty of Engineering (2019).  Aaron founded the $70M Applied Materials-NUS Corporate Laboratory at NUS in 2018, a major research collaboration between US-based Applied Materials and the University to co-innovate on next-generation semiconductor materials. Aaron currently directs the Singapore Hybrid-Integrated Next-Generation μ-Electronics (SHINE) Centre, a National Medium-Sized Research Center funded by the Singapore National Research Foundation to innovate on Heterogeneous Integration. Prior to joining NUS in 2016, Aaron was the Vice President of Logic Technologies at IMEC. Working with Semiconductor Industry leaders like Intel, TSMC, Samsung, Global foundries, Apple, and Sony, where he directed the research and development of next generation semiconductor technologies and emerging nano-device architectures. Prior to IMEC, he had careers at major US Semiconductor companies like Qualcomm, IBM, and Motorola/Freescale. Aaron graduated from University of Illinois at Champaign-Urbana, USA, where he received his B.Sc. (Highest Honors), M.Sc., and Ph.D. degrees in Electrical Engineering (Edmund J. James Scholar). He has published over 400 technical papers and holds more than 50 US patents. Aaron was recognized as Singapore’s National Research Foundation’s Returning Singapore Scientist and more recently, he has been recognized as a fellow of the US National Academy of Inventors.

Dr Yan Wang received her PhD from University of Cambridge in 2021 and become an independent PI at University of Cambridge in 2024. She is a research fellow at St John’s College at Cambridge. Her research focuses on developing ultra-low power electronics based on two dimensional (2D) materials. She develops innovative methods to study atomic interfaces using imaging, spectroscopic, and electronic techniques, leveraging these approaches to investigate how the interfaces of 2D materials affect the overall device performance.

Heejun Yang received a B.S. in physics from KAIST in 2003 and a joint Ph.D. in physics from Seoul National University (Korea) and the University of Paris-Sud XI (France). He was awarded the IUPAP Young Scientist Prize (YSP) in Semiconductor Physics 2018 for his outstanding contribution to novel interface devices based on structural, electronic, and quantum-state control with van der Waals layered materials. His Ph.D. subject was graphene by scanning tunneling microscopy and spectroscopy (STM/STS), and he experienced industrial device studies in Samsung Electronics from 2010 to 2012. Then, he conducted his research on graphene spintronics in Albert Fert’s (2007 Novel laureate) group in CNRS/Thales as a postdoc from 2012 to 2014.

Based on his research background in molecular and nanometer-scale studies (in Seoul and Paris) and electric and spintronic device physics (in Samsung and CNRS/Thales), he moved to Sungkyunkwan University (2014~2021) and KAIST (2021~) and started original device studies with phase engineering of low-dimensional materials. He has proposed novel and conceptual interface devices such as ‘Graphene Barristor’ and ‘Ohmic homojunction contact between semiconductor channels and metal electrodes.’ In 2022, he gave an invited talk at the IUPAP centenary symposium as a representative YSP winner.

Prof. Zhiyong Zhang is currently a professor at the School of Electronics, Peking University. He serves as the director of the Key Laboratory for the Physics and Chemistry of Nanodevices and as the deputy director of the Center for Carbon-based Electronics at the same institution. His research primarily focuses on carbon-based nanoelectronics, encompassing CMOS transistors, sensors, and innovative information device technologies utilizing carbon nanotubes. Prof. Zhang's contributions have laid the groundwork for carbon-based electronics and have advanced the practical development of this technology. He has published over 200 papers including Science, Nature Electronics, etc.

Wenjuan Zhu is an Associate Professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign. She received her Ph.D. degree in Electrical Engineering from Yale University in 2003. From 2003 to 2008, she worked as an Advisory Engineer/Scientist at the Semiconductor Research and Development Center (SRDC) at IBM, and from 2008 to 2014, she was a Research Staff Member at the IBM T. J. Watson Research Center.  In 2014, she joined the faculty at the University of Illinois at Urbana-Champaign. She is a recipient of the AMD Jerry Sanders Faculty Scholar Award (2023), DARPA Young Faculty Award (2020), IBM Faculty Award (2018), and National Science Foundation CAREER Award (2017). Her current research interests include nanoscale electronic and optoelectronic devices based on two-dimensional materials and ferroelectric materials. Her research in the past has led to numerous publications and patents.