Andras Kis is a Full Professor of Electrical Engineering at EPFL, Lausanne. His research interests include electronic devices, TMDC exciton and valley physics, and material growth. He pioneered the use of the 2D semiconductor MoS₂ in transistors, a breakthrough that led to MoS₂ being recognized in the ITRS roadmap and gaining widespread attention with the corresponding paper having received more than 16’000 citations. Atomically thin 2D semiconductors like MoS₂ are emerging as a new material class in the semiconductor industry, with applications in scaled devices, neuromorphic circuits, and photonic devices due to their favorable electrical and optical properties.

Andras Kis was born in Zagreb, Croatia. He received his M. Sc degree in physics from the University of Zagreb, Croatia and the Ph.D. degree in physics from École Polytechnique Fédérale de Lausanne, Switzerland in 2003 in the group of Prof. László Forró. He worked as a postdoctoral researcher at the University of California, Berkeley from 2004 to 2007 in the group of Prof Alex Zettl. He was appointed as an assistant professor at the Institute of Electrical engineering, EPFL in 2008.

A highly cited researcher and an IEEE Fellow, Andras Kis is the recipient of the 2024 IEEE Lotfi A. Zadeh Award for Emerging Technologies, recognizing his pioneering contributions to 2D materials and electronic devices. He currently serves as the Editor-in-Chief of Nature Partner Journal: 2D Materials and Applications.

Dr. Shigeo Maruyama, FRSC, received his Ph.D. from the University of Tokyo in 1988. He worked as a Research Associate until 1991, as a Lecturer for a year, as an Associate Professor from 1993, and as a full Professor from 2004 at the University of Tokyo. Since 2014, he has been a Distinguished Professor at the Department of Mechanical Engineering, School of Engineering at the University of Tokyo. He joined Professor Richard Smalley's group at Rice University as a visiting fellow for about 2 years from 1989. He was also assigned as a visiting professor at Ecole Centrale Paris in 2006, the cross-appointment fellow for advanced industrial science and technology (AIST) from 2015 to 2021, a guest professor at Peking University from 2016 to 2017, and a Qiushi Guest Professor at Zhejiang University from 2024.

 His research interests include nanoscale thermal engineering, molecular dynamics simulations, carbon nanotubes, graphene, 1D heterostructures, and solar cell applications. He developed the alcohol catalytic chemical vapor deposition (ACCVD) process for synthesizing single-walled carbon nanotubes (SWCNTs) in 2002. More recently, he has developed 1D van der Waals heterostructures based on SWCNTs, where SWCNTs are co-axially wrapped by hexagonal boron nitride nanotube (BNNT) and transition metal dichalcogenides (TMD) nanotubes. He served as the president of “The Fullerenes, Nanotubes, and Graphene Research Society" from 2011–2020 and is the co-chair of the steering committee of "International Conference on Science and Application of Nanotubes and Low-Dimensional Materials" (NT). Since 2023, he has been a member of the Engineering Academy of Japan.

Dr. Das received his B.Eng. degree (2007) in Electronics and Telecommunication Engineering from Jadavpur University, India, and his Ph.D. degree (2013) in Electrical and Computer Engineering from Purdue University. He was a Postdoctoral Research Scholar (2013-2015) and Assistant Research Scientist (2015-2016) at Argonne National Laboratory (ANL). Dr. Das joined the Department of Engineering Science and Mechanics (ESM) at Penn State University in January 2016.  Dr. Das received the Young Investigator Award from the United States Air Force Office of Scientific Research in 2017 and the National Science Foundation (NSF) CAREER award in 2021. Das Research Group at Penn State focuses on 2D microelectronics for monolithic 3D integration, bio-inspired sensing, neuromorphic computing, and hardware security.

Dr Yan Wang received her PhD from University of Cambridge in 2021 and become an independent PI at University of Cambridge in 2024. She is a research fellow at St John’s College at Cambridge. Her research focuses on developing ultra-low power electronics based on two dimensional (2D) materials. She develops innovative methods to study atomic interfaces using imaging, spectroscopic, and electronic techniques, leveraging these approaches to investigate how the interfaces of 2D materials affect the overall device performance.

Prof. Tibor Grasser is an IEEE Fellow and head of the Institute for Microelectronics at TU Wien, Austria.  He has edited various books, e.g. on the bias temperature instability, hot carrier degradation, and low-frequency noise (all with Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM (General Chair 2021), IRPS, ESSDERC (TPC Co-Chair 2015), IIRW (General Chair 2014), and SISPAD (General Chair 2007), is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011).  He served as an Associate Editor for IEEE T-ED and Microelectronics Reliability (Elsevier).

Aaron Voon-Yew Thean is the GlobalFoundries Professor of Electrical and Computer Engineering at the National University of Singapore (NUS). He is currently the Deputy President (Academic Affairs) and Provost of NUS. He was he Founding Dean of NUS College of Design and Engineering (2022), and the Dean of the Faculty of Engineering (2019).  Aaron founded the $70M Applied Materials-NUS Corporate Laboratory at NUS in 2018, a major research collaboration between US-based Applied Materials and the University to co-innovate on next-generation semiconductor materials. Aaron currently directs the Singapore Hybrid-Integrated Next-Generation μ-Electronics (SHINE) Centre, a National Medium-Sized Research Center funded by the Singapore National Research Foundation to innovate on Heterogeneous Integration. Prior to joining NUS in 2016, Aaron was the Vice President of Logic Technologies at IMEC. Working with Semiconductor Industry leaders like Intel, TSMC, Samsung, Global foundries, Apple, and Sony, where he directed the research and development of next generation semiconductor technologies and emerging nano-device architectures. Prior to IMEC, he had careers at major US Semiconductor companies like Qualcomm, IBM, and Motorola/Freescale. Aaron graduated from University of Illinois at Champaign-Urbana, USA, where he received his B.Sc. (Highest Honors), M.Sc., and Ph.D. degrees in Electrical Engineering (Edmund J. James Scholar). He has published over 400 technical papers and holds more than 50 US patents. Aaron was recognized as Singapore’s National Research Foundation’s Returning Singapore Scientist and more recently, he has been recognized as a fellow of the US National Academy of Inventors.

Zheng Vitto Han is a research professor at the Institute of Optoelectronics, Shanxi University, China. He also serves jointly as the deputy lab director at the Liaoning Academy of Materials (LAM) and the director of the Institute of Quantum Materials and Devices at LAM in Shenyang, China. He obtained his Ph.D. at the Néel Institute, CNRS, France, and conducted postdoctoral research at Columbia University in New York City. His research primarily focuses on the emerging physical properties of functional materials at mesoscopic scales and on further implementing these interesting properties in future applications of nano-assemblies and nanoelectronics. Over the past few years, his team has uncovered a series of novel physical phenomena and nanostructures, such as the demonstration of a finFET with a single atomic fin, the realization of robust quantum Hall phases through the interfacial charge transfer and the induced charge orderings, the development of van der Waals polarity-engineered 3D integration of 2D complementary logic. The related works have been published in journals including Nature, Nature Nanotechnology, Nature Electronics, and Nature Communications.

Heejun Yang received a B.S. in physics from KAIST in 2003 and a joint Ph.D. in physics from Seoul National University (Korea) and the University of Paris-Sud XI (France). He was awarded the IUPAP Young Scientist Prize (YSP) in Semiconductor Physics 2018 for his outstanding contribution to novel interface devices based on structural, electronic, and quantum-state control with van der Waals layered materials. His Ph.D. subject was graphene by scanning tunneling microscopy and spectroscopy (STM/STS), and he experienced industrial device studies in Samsung Electronics from 2010 to 2012. Then, he conducted his research on graphene spintronics in Albert Fert’s (2007 Novel laureate) group in CNRS/Thales as a postdoc from 2012 to 2014.

Based on his research background in molecular and nanometer-scale studies (in Seoul and Paris) and electric and spintronic device physics (in Samsung and CNRS/Thales), he moved to Sungkyunkwan University (2014~2021) and KAIST (2021~) and started original device studies with phase engineering of low-dimensional materials. He has proposed novel and conceptual interface devices such as ‘Graphene Barristor’ and ‘Ohmic homojunction contact between semiconductor channels and metal electrodes.’ In 2022, he gave an invited talk at the IUPAP centenary symposium as a representative YSP winner.